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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
IFR801 THRU IFR807
FAST RECOVERY GLASS PASSIVATED RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes
FEATURES
* * * * * * Fast switching Low leakage Low forward voltage drop High current capability High surge capability High reliability
ITO-220A
.185(4.7) .169(4.3) .134(3.4) .110(2.8)
MECHANICAL DATA
* * * * * * Case: ITO-220A molded plastic Epoxy: Device has UL flammability classification 94V-O Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 2.24 grams Polarity: As marking
.114(2.9) .098(2.5)
.406(10.3) .382(9.7)
.138(3.5) .122(3.1)
.04MAX. (1.0) .071(1.8) .055(1.4) .055(1.4) .039(1.0) .035(0.9) .020(0.5) .108(2.75) .091(2.30)
.602(15.3) .579(14.7) .154 (3.9) .138 (3.5) .531(13.5) .492(12.5) .114(2.9) .098(2.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
o
.031(0.8) .016 (0.4)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25 C unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage
o Maximum Average Forward Rectified Current at TC = 75 C
o
SYMBOL VRRM VRMS VDC IO IFSM RJC CJ TJ, TSTG
IFR801 50 35 50
IFR802 100 70 100
IFR803 200 140 200
IFR804 400 280 400 8.0 200 3 50 -55 to + 150
IFR805 600 420 600
IFR806 800 560 800
IFR807 1000 700 1000
UNITS Volts Volts Volts Amps Amps
0
Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 3) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range
C/ W pF
0
C
ELECTRICAL CHARACTERISTICS (At TA = 25 C unless otherwise noted) CHARACTERISTICS Maximum Instantaneous Forward Voltage at 8.0A DC Maximum DC Reverse Current o at Rated DC Blocking Voltage TA = 25 C Maximum Full Load Reverse Current Average, o Full Cycle at TC = 100 C Maximum Reverse Recovery Time (Note 1) SYMBOL VF IFR801 IFR802 IFR803 IFR804 1.3 10 IR 150 trr 150 250 500 uAmps nSec 2003-1 IFR805 IFR806 IFR807 UNITS Volts uAmps
o
NOTES : 1. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A 2. Measured at 1 MHz and applied reverse voltage of 4.0 volts 3. Thermal Resistance Junction to Case. 4. Suffix "R" for Reverse Polarity.
RATING AND CHARACTERISTIC CURVES ( IFR801 THRU IFR807 )
AVERAGE FORWARD CURRENT, (A)
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT, (A)
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 300 250 200 150 100 50 0 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100
8.3ms Single Half Sine-Wave (JEDED Method)
8
6 4
Single Phase Half Wave 60Hz Inductive or Resistive Load
2
0
0
25
50 75 100 125 150 175 CASE TEMPERATURE, (oC)
INSTANTANEOUS FORWARD CURRENT, (A)
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 10 3.0 1.0 0.3 0.1 .03 .01 0.4
TJ = 25oC Pulse Width=300uS 1% Duty Cycle
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS 10
INSTANTANEOUS REVERSE CURRENT, (uA)
6 4 2 1.0 .6 .4 .2 .1 .06 .04 .02 .01
TJ = 25
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
100
120
140
INSTANTANEOUS FORWARD VOLTAGE, (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, ( V )
TJ = 25 C
o
FIG. 6 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50 NONINDUCTIVE 10 NONINDUCTIVE
trr +0.5A (-) 0 PULSE
GENERATOR
(+) 25 Vdc (approx) (-)
D.U.T
-0.25A
(NOTE 2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+) -1.0A
1 NOTES: Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms.
1cm
SET TIME BASE FOR 50/100 ns/cm
RECTRON

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